Figure 1: Scheme of the experimental setup based on RPLD

Figure 2: The measurement scheme of thermo-sensitivity of 2D structure synthesized by RPLD

Figure 3: The measurement scheme of photosensitivity of 2D structure synthesized by RPLD

Figure 4: Thermo emf coefficient S vs. temperature for the 2D structure deposited on Si substrate at P(CH4) = 1.0 Pa inside the reactor: 1-TS =293 K, d =30 nm, 2-TS= 800 K, d = 90 nm

Figure 5: Thermo emf coefficient S vs. temperature for the 2D structure deposited on Si substrate at P(CH4) = 3.0 Pa inside the reactor: 1-TS =293 K, d =77 nm, 2-TS= 800 K, d = 60 nm

Figure 6: XRD diagram of the 2D structure deposited on Si substrate at P(CH4) = 1.0 Pa inside the reactor: a-TS =293 K,b-TS= 800 K

Figure 7: XRD diagram of the 2D structure deposited on Si substrate at P(CH4) = 1.0 Pa inside the reactor: a-TS =293 K,b-TS= 800 K

Figure 8: Photosensitivity of the 2D structure deposited on Si substrate at different conditions: 1-P(CH4) = 1.0 Pa, TS=293 K; 2- P(CH4) = 1.0 Pa TS= 800 K; 3 - P(CH4) = 3.0 Pa, TS= 293 K; 4 - P(CH4) = 3.0 Pa, TS= 800 K

Figure 9: Temperature dependences of 2D structure’s specific conductivity: a-P(CH4)= 1.0 Pa at TS = 293 K (1), 800 K (2); b - P(CH4)= 3.0 Pa at TS= 293 K (1), 800 K (2)

Figure 10: Morphologies made by SEM of the 2D structure deposited by RPLD on Si substrate at its different temperature (TS) and P(CH4) = 1.0 Pa inside the reactor: a-TS = 293 K, b-TS = 800 K

Figure 11: Morphologies made by SEM of the 2D structure deposited by RPLD on Si substrate at its different temperature (TS) and P(CH4) = 3.0 Pa inside the reactor: a - TS=293 K, b -TS = 800 K

Figure 12:Elements’ composition in atomic % made by the EDXS analysis of the 2D structure deposited with RPLD on Si substrate at its different temperature (Ts) and P(CH4) =3.0 Pa inside the reactor: a-Ts = 293 K, b-Ts= 800 K

Reference

Material

Type of structure

Synthesis method

Smax (mV/K)

Fmax(VC/W)

Temperature range (K)

2

β-FeSi2
CrSi2

2D
2D

PLD
PLD

1.5
1.4

----------------
----------------

100-340
220-340

3

Fe2O3-X

2D

RPLD

1.65

----------------

293-322

4

Cr3-XO3-Y

2D

RPLD

3.5-4.5

----------------

270-290

7

Fe2O3-X

2D
2D

LCVD
RPLD

1.5-1.6
1.65

40
43

260-290
260-300

12

SrTiO3

2D

Thermal annealing

annealing

0.85

---------------

85-300

13

PbSe, PbTe

Bulk (lead-salt)

MBE

0.1- 0.25

---------------

300

13

PbSe, PbTe

Bulk (lead-salt)

MBE

0.1- 0.25

---------------

300

15

Fe2O3-X

2D

RPLD

8.0

----------------

280-330

16

Fe2O3-X/Cr3-XO3-Y
(4 layers)

2D

RPLD

15.0

-----------------

280-330

17

Cr3-XO3-Y/Fe2O3-X
(2 layers)

2D

RPLD

0.62

420

289-337

Table 1: Data of the deposited structures with high Smax coefficient and high photosensitivity Fmax

Pressure of CH4 (Pa)

Si substrate temperature TS (K)

2D structure thickness d (nm)

Skin layer thickness (nm) in the range 400-800 nm

Temperature  range (K)

Energy band gap (eV)

1.0

293

30

25-39

275-340

0.64

1.0

800

90

130-200

275-295

0.48

3.0

293

77

30-62

270-320
320-330

0.45
2.10

3.0

800

60

40-124

275-305

1.00

Table 2: Parameters of the deposited 2D structures on Si substrate at definite CH4 pressure in the reactor and Definite substrate temperature

Pressure of
CH4 (Pa)

Si substrate tem- em perature Ts (K) (K)

Smax
(mV/K)

Fmax (VC/W)

%C

%O

%Cr

1.0

293

2.6

265

--------

56

44

1.0

800

1.6

11.0

--------

59

41

3.0

293

1.7

707

29.44

37.55

33.01

3.0

800

1.4

1.10

25.11

43.01

31.87

Table 3: Parameters of the deposited 2D structures on Si substrate at definite CH4 pressure in the reactor, definite substrate temperature and their elements’ composition in atomic % without of Si atoms made with EDXS